How can I test a MOSFET for drain-source breakdown voltage on my curve tracer?

Question:

How can I test a MOSFET for drain-source breakdown voltage on my curve tracer?

Answer:

Drain-Source Breakdown Voltage - V(br)DSS

What It Is:

Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=0.  Since it's the reverse current through a pinched-off channel, ID exhibits a knee shaped rise, increasing rapidly once breakdown occurs.

On the curve tracer, the Collector Supply drives the drain and the gate is shorted to the source so VGS=0.

What The Display Shows:

The display shows VDS on the horizontal axis, and the resulting ID on the vertical axis.  The specification is met when, at the specified ID, VDS is greater than or equal to the specified minimum.

How To Do It:

1. Set controls:

A: Max Peak Volts to the lowest setting above the specified minimum

     VDS

            B: Max Peak Power Watts to the lowest setting that satisfies (ID x VDS)

            C: Horizontal Volts/Div to display VDS between the 5th and 10th

    horizontal divisions

            D: Vertical Current/Div to display ID between the 5th and 10th vertical

    divisions                  

            E: Collector Supply Polarity to +Leakage (for N-channel) or -Leakage

                (for P-channel)

            F: Configuration to (Base/Short, Emitter/Common)

            G: Variable Collector Supply to minimum % (full ccw)

            H: DotCursor ON

2. Apply power to the MOSFET:

            A: Position the Left/Right switch as appropriate

            B: Slowly increase the Variable Collector Supply % until the specified ID is attained

3. Compare to data sheet specifications:

            Check that at the specified ID, VDS is greater than or equal to the specified minimum

FAQ ID : 53901

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